Qorvo has expanded its portfolio of 750V SiC FETs to provide the highest-performance options for use in power design applications.
Qorvo has recently made the announcement that they have developed seven 750V silicon carbide (SiC) FETs that come in the surface mount D2PAK-7L package. The SiC FETs offered by Qorvo come with a package choice that makes them ideally suited for the constantly expanding markets for onboard chargers, soft-switched DC/DC converters, battery charging (quick DC and industrial), and IT/server power supply. They offer the ideal solution for high-power applications that require maximum efficiency, minimum conduction losses, and outstanding cost effectiveness in a package that is thermally improved. They do this by delivering the solution in a package that is thermally enhanced.
The Gen 4 UJ4C/SC series is rated at 9, 11, 18, 23, 33, 44, and 60 mohms, and it features the industry’s lowest RDS(on) of 9 milliohms (mohms) at 650/750V. This is the series’ most notable feature. This extensive assortment gives engineers access to a wider number of device possibilities, which in turn enables them to have greater freedom in achieving an optimal cost/efficiency balance while still preserving generous design margins and circuit resilience. Utilizing a one-of-a-kind cascode SiC FET technology, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET, these devices deliver a best-in-class RDS x A figure of merit, which results in the lowest conduction losses in a small die. This is accomplished by utilizing a cascode SiC FET technology.
According to Anup Bhalla, who was the chief engineer at UnitedSiC (now known as Qorvo), “Low switching loss allows for higher frequency operation and improved system power density. The D2PAK-7L package reduces inductance from compact internal connection loops, which, when combined with the included Kelvin source connection, results in the lowest switching loss possible. These devices also include silver-sinter die attach, which results in very low thermal resistance for maximal heat extraction on standard PCBs as well as IMS substrates with liquid cooling. This is possible because to the devices’ compatibility with both normal PCBs and IMS substrates.”