Five brand-new 650V SiC MOSFET devices of the third generation have been made available for industrial equipment by Toshiba Electronics Europe GmbH. SMPS and UPS for servers, data centers, and communication equipment are just a few of the demanding applications that will make use of these extremely effective and adaptable solutions. Additionally, they will be employed in renewable energy systems like PV inverters and bi-directional DC-DC converters for EV charging. The company’s third generation SiC technology, which optimizes the cell architectures utilized in second-generation devices, provides the foundation for the new TW015N65C, TW027N65C, TW048N65C, TW083N65C, and TW107N65C.
This improvement has resulted in a roughly 80% improvement in a critical FoM that is computed as the product of drain-source on-resistance (RDS(on)) and gate-drain charge (Qg) to reflect static and dynamic losses. This significantly reduces losses and enables the creation of power solutions with higher power densities and reduced operating expenses. The third-generation MOSFETs contain an integrated SiC Schottky barrier, similar to prior devices, with a low forward voltage (VF) of -1.35V (typ) to minimize RDS(on) fluctuation and increase reliability. The new devices have RDS(on) values as low as 15mOhm and can tolerate currents (ID) up to 100A. Each device is placed in a TO-247 container, which is the norm in the industry.
