A new generation of Si-IGBTs with reduced power losses and a tiny footprint is being developed by Renesas Electronics Corporation. The AE5-generation IGBTs will be mass manufactured on the company’s 200mm and 300mm wafer lines at its plant in Naka, Japan, commencing in the first half of 2023 with a focus on the next-generation EV inverters. Further, to address the rising demand for power semiconductor products, it will scale up production at its new 300mm wafer fab for power semiconductors beginning in the first half of 2024.
In comparison to the current-generation AE4 devices, the silicon-based AE5 method for IGBTs achieves a 10% decrease in power losses. These power reductions will help EV makers conserve battery charge and extend driving range. Additionally, the new goods are around 10% smaller while yet being quite durable. The new devices achieve the best degree of performance for IGBTs in the industry by carefully balancing the trade-offs between durability and low power loss. Furthermore, by minimizing parameter changes among IGBTs and providing stability when running IGBTs in parallel, the new IGBTs significantly enhance performance and safety as modules. These characteristics provide engineers more freedom to create compact inverters with outstanding performance.
According to Katsuya Konishi, vice president of Renesas’ Power System Business Division, “Renesas’ IGBTs provide highly reliable, robust power solutions that build on our experience in manufacturing automotive-grade power products for the last seven years, and the demand for automotive power semiconductors is rapidly growing as EVs become more widely available.” We are offering the best features and price performance for mid-range EV inverters, which are anticipated to see strong growth in the future, with the most recent devices likely to be in mass production.
