For industrial power supplies and motor controllers for Light Electric Vehicles (LEV), Magnachip Semiconductor Corporation has introduced its third-generation 200V MV MOSFETs.
To increase energy efficiency in power devices, it has introduced new MOSFETs that use third-generation trench MOSFET technology. Compared to the 100V MV MOSFET of the previous generation, the capacitance dropped by 50%. A high FOM was made possible by the improved core cell and termination designs, which reduced RDS(on) and overall gate charge.
Additionally, in order to reduce product size and enhance heat dissipation, these third-generation MOSFETs are available in surface mount devices TOLL, M2PAK, and TO-220 of the through-hole type, respectively. Additionally, the high power density and quick switching of these MOSFETs considerably aid in their energy efficiency. These MOSFETs are perfect for LEV motor controllers and industrial power supplies that require a high efficiency and steady power supply due to their assured operating junction temperature range of -55C to 175C and high level of avalanche resilience.
High-performance MV MOSFETs are required due to the growth of sophisticated applications in the automotive and industrial sectors, according to YJ Kim, CEO of Magnachip. “Magnachip will keep improving its MV MOSFET product line, which ranges from 40V to 200V, allowing our customers to increase the competitiveness of their products,” the company claims.