General-purpose MOSFETs from Infineon Technologies are available from Mouser in a variety of sizes. Its extensive line of high-voltage and low-voltage MOSFETs offers flexibility, value, and adaptability for a range of applications for designers searching for MOSFETs to aid with project, price, or logistical requirements. For designs up to 250V, the company’s general-purpose MOSFETs come in low-voltage variants, while high-voltage versions are available for designs ranging from 500V to 900V. The large variety of single and dual N- and P-channel low-voltage MOSFETs have drain-source breakdown voltages ranging from 20V to 600V. The continuous drain current for these devices ranges from 100mA to 260A, and the drain-source resistance is specified at 1.1mOhms to 30-Ohms. These AEC-Q101-qualified low-voltage MOSFETs have an operating temperature range of -55C to +175C.
The devices provide drain-source breakdown voltages of 500V to 900V, drain-source resistance of 77mOhms to 4.68-Ohms, and continuous drain current of 1A to 54.9A. These devices have a -40C minimum working temperature and a 5W to 500W power dissipation range. A wide variety of package configurations are available for these devices, including a SOT-23, PQFN, SuperSO8, TO-252 (DPAK), SOT-223, and TO-220. Additionally, Infineon’s online design tools, simulation models, and thorough product support documentation are available for all of the devices. These general-purpose MOSFETs may be incorporated into designs that require reverse battery protection capabilities, switching power between alternative sources, or the shutting down of unused loads, making them ideal for a variety of power conversion and management applications. SMPS, chargers and adapters, lights, TV power supply, servers and telecommunications equipment, battery-powered applications, motor control and drives, and BMS are examples of typical uses.
