• Company directory
  • Video
  • Partner content
  • News
  • Focus
    • Semiconductors
    • Design
    • Automotive
    • Energy
    • Industrial
    • Power Supplies/Energy Storage
    • Test&Measurements
    • Motor Control
    • Aerospace&Defense
    • Energy Harvesting
  • Technical articles
  • White papers
  • ebooks
  • Tutorial
Reading: Toshiba develops SiC MOSFET with check-pattern embedded Schottky barrier diodes
Share
Aa
e-power Journal
  • Company directory
  • Video
  • Partner content
Search
  • News
    • All news
  • Focus
    • Semiconductors
    • Design
    • Automotive
    • Energy
    • Industrial
    • Power Supplies/Energy Storage
    • Test&Measurements
    • Motor Control
    • Aerospace&Defense
    • Energy Harvesting
  • Categories
    • Technical articles
    • White papers
    • ebooks
    • Tutorial
Follow US
  • Privacy Policy
  • Cookie Policy
© 2022 Foxiz News Network. Ruby Design Company. All Rights Reserved.
e-power Journal > News > Focus > Semiconductors > Toshiba develops SiC MOSFET with check-pattern embedded Schottky barrier diodes
NewsSemiconductors

Toshiba develops SiC MOSFET with check-pattern embedded Schottky barrier diodes

Giovanni Di Maria
Giovanni Di Maria January 3, 2023
Updated 2023/01/03 at 10:39 AM
Share
SHARE

The Japan-based Toshiba Electronic Devices & Storage Corp (TDSC), which was spun off from Toshiba Corp in 2017, presented research on the development of a silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) that arranges embedded Schottky barrier diodes (SBD) in a check pattern (check-pattern embedded SBD) to realise both low on-resistance and high reliability, at the 68th annual IEEE International According to Toshiba, the design achieves a 20% reduction in on-resistance (RonA) compared to its current SiC MOSFET, without sacrificing reliability. Due to its ability to offer greater voltages and lower losses than silicon, silicon carbide is frequently regarded as the next-generation material for power devices. SiC is currently mostly used in railway inverters, but in the future, it may also find usage in industrial equipment downsizing and vehicle electrification. Bipolar conduction in the body diode during reverse operation of SiC MOSFETs is damaging because it reduces on-resistance, thus this issue must first be resolved.

To deactivate body diodes, Toshiba Electronic Devices & Storage Corp devised a device construction that embeds SBDs within the MOSFET. However, it discovered that doing so reduces channel density and raises RonA. A new embedded SBD structure has finally resolved this trade-off, and Toshiba has confirmed that it significantly enhances performance properties. By using a check-pattern SBD distribution, Toshiba has reduced conduction loss in its SBD-embedded SiC MOSFET and obtained good diode conductivity. According to analysis of the on-side current characteristics of 1.2kV-class embedded SBD MOSFETs with the optimised design, using the check design to place the embedded SBDs close to the body diodes effectively limits bipolar conduction of the parasitic diodes, while the unipolar current limit of reverse conduction is double that realised by the existing striped SBD pattern design for the same SBD area consumption. At 2.7mOhm/cm2, RonA was discovered to be around 20% less dense. SiC MOSFETs must undergo this verified trade-off improvement before being employed in inverters for motor-drive applications. Toshiba is still conducting assessments to enhance dynamic features and dependability as well as to create appealing, high-performance power semiconductors that reduce carbon emissions.

You Might Also Like

Weltrend Semiconductor partners with Transphorm to release the first SuperGaN System-in-Package

800V EVs charge automobiles into the mainstream using SiC power devices

A new current sensor for high-power EV traction inverters is announced by LEM

Over 56 thousand Hydrogen Passenger Vehicles Sold So Far

CAP-XX launches a new 3V, 750mF ultra-thin prismatic supercapacitor

TAGGED: mosfet, Schottky, Toshiba
Giovanni Di Maria January 3, 2023
Share this Article
Facebook Twitter Whatsapp Whatsapp LinkedIn Email Print
Previous Article ROHM Industry’s Highest Rated Power Shunt Resistors in the 0508 Size
Next Article PoL DC-DC with high-efficiency ideal for distributed power
Leave a comment

Leave a Reply Cancel reply

Your email address will not be published. Required fields are marked *

Latest News

PCB Design: When and how multi-layer PCBs shall be used
Design Technical articles
Weltrend Semiconductor partners with Transphorm to release the first SuperGaN System-in-Package
News Semiconductors
800V EVs charge automobiles into the mainstream using SiC power devices
Automotive News
A new current sensor for high-power EV traction inverters is announced by LEM
News Power Supplies/Energy Storage

You Might Also Like

NewsSemiconductors

Weltrend Semiconductor partners with Transphorm to release the first SuperGaN System-in-Package

March 8, 2023
AutomotiveNews

800V EVs charge automobiles into the mainstream using SiC power devices

March 8, 2023
NewsPower Supplies/Energy Storage

A new current sensor for high-power EV traction inverters is announced by LEM

March 1, 2023
AutomotiveNews

Over 56 thousand Hydrogen Passenger Vehicles Sold So Far

February 21, 2023

Quick Link

  • COMPANY DIRECTORY
  • NEWS
  • PARTNER CONTENT
  • ABOUT

Support

  • CONTACT US

Sign up for Our Newsletter

Subscribe to our newsletter to get our newest articles instantly!

© 2022 E-Power Journal - All Rights Reserved.

  • Privacy Policy
  • Cookie Policy

Removed from reading list

Undo
Welcome Back!

Sign in to your account

Lost your password?