GaN devices have been rapidly adopted in a wide range of applications, necessitating continuing reliability statistics collecting and investigation into the underlying physics of failure in GaN devices, including integrated circuits (ICs).
The Phase-15 Reliability Report from EPC, which adds specific reliability measurements and forecasts for real-world applications of GaN devices like solar optimizers, lidar sensors, and DC-DC converters, documents ongoing work utilizing the test-to-fail methodology. GaN devices have been rapidly adopted in a wide range of applications, necessitating the collection of reliability data and investigation into the underlying physics of failure in GaN devices, including integrated circuits (ICs). Also, it’s important to seek for information from actual experience that either supports the data generated from lab experiments or raises fresh concerns about mission robustness. The material in this paper, which identifies the intrinsic failure mechanisms of the devices, comes from testing eGaN devices to the point of failure. It is possible to create physics-based models that precisely predict a product’s safe operating life over a wider range of operating situations by recognizing these intrinsic failure processes. This is used to assess the mission robustness for certain applications using data from real-world experience. Nine sections, each addressing a distinct failure mechanism or use scenario, make the report.
EPC’s Phase 15 Study on GaN Reliability Provides Projected GaN Device Longevity in Real-World Applications
