An EV drive motor and power electronics will be integrated into the next-generation E-Axle (X-in-1 system) for electric vehicles. In order to develop semiconductor solutions for the next-generation E-Axle (X-in-1 system) for electric vehicles (EVs), which combines a drive motor and power electronics, Nidec Corporation and Renesas Electronics Corporation have chosen to work together. Modern EVs are using a 3-in-1 part known as the E-Axle, which combines a motor, inverter, and gearbox (reduction gear). In order to attain high performance and efficiency, as well as smaller size, lighter weight, lower cost, and to speed up vehicle development, EVs are also integrating power electronics controls, such as DC-DC converters and onboard chargers (OBCs). EV manufacturers in developed countries like China have created an X-in-1 platform that combines several features, accelerating the adoption in numerous automobile models.
Automobile quality cannot be kept at a high level when X-in-1 becomes more complex and combines more features. To ensure vehicle safety and security, it is crucial to develop preventative safety technology, such as diagnostic capabilities and failure prediction. The two companies made the decision to combine their own technologies in order to develop an exceptionally trustworthy and high-performing proof of concept (PoC) for the X-in-1 system in order to get around this problem. The PoC enables the X-in-1 system’s more compact design, lighter weight, lower price, as well as the best performance and efficiency in the sector. The companies anticipate releasing the initial Proof of Concept (PoC) by the end of 2023. It will contain a 6-in-1 system with a DC-DC converter, OBC, power distribution unit (PDU), motor, inverter, and gearbox. In addition to other components, a highly integrated X-in-1 PoC with a battery management system (BMS) will be produced by Nidec and Renesas in 2024. The second Proof of Concept will substitute GaN (gallium nitride) for the DC-DC and OBC power components in the first PoC in order to further reduce size and cost. GaN performs admirably in high-frequency applications.
