Diodes launches first SiC 1200V MOSFET in TO247-4 package
The TO247-4-packaged SiC MOSFET in question is the first one on the…
Toshiba develops SiC MOSFET with check-pattern embedded Schottky barrier diodes
To deactivate body diodes, Toshiba Electronic Devices & Storage Corp devised a…
Wide range of general-purpose MOSFETs for power conversion applications
The devices provide drain-source breakdown voltages of 500V to 900V, drain-source resistance…
Hotswap application specific MOSFETs with improvement doubled in SOA
Hotswap applications may have a reliability difficulty due to in-rush currents. By…
SICFETs are included in TOLL packages
The SiC MOSFETs are designed for high-performance power electronics applications, such as…
New high SOA MOSFET optimised for 12V hot swap applications
In server hot swap applications, a high SOA is essential since a…
MV MOSFETs of the third generation for industrial power supplies and LEV motor controllers
For industrial power supplies and motor controllers for Light Electric Vehicles (LEV),…