Beginning with the 30 A NGW30T60M3DF, Nexperia made its debut in the insulated gate bipolar transistor (IGBT) market with a variety of 600 V devices. By including IGBTs to its extensive portfolio, Nexperia is addressing the growing demand for effective, high-voltage switching devices that meet a variety of performance and cost parameters. This enables the business to satisfy a range of consumer requirements. These new IGBTs enable a higher power density in power conversion and motor drive applications, including robotics, elevators, operating grippers, in-line manufacturing, power inverters, uninterruptible power supplies (UPS), photovoltaic (PV) strings, electric vehicle (EV) charging, induction heating, and welding.
IGBT technology is a fairly advanced one. Despite this, it is projected that the market for these products would grow along with the increased popularity of solar panels and EV chargers. The 600 V IGBTs from Nexperia have a durable, economical carrier-stored trench-gate advanced field-stop (FS) architecture that offers high levels of durability and performance with extraordinarily low conduction and switching loss at operating temperatures up to 175°C. Power inverters, induction heaters, welding tools, and industrial applications including motor drives and servos, robotics, elevators, running grippers, and in-line manufacturing are all made more effective and reliable as a result. Designers have access to IGBTs from the high speed (H3) and medium speed (M3) series. These IGBTs were created with incredibly small parameter dispersion, allowing for the safe connecting of numerous devices simultaneously. Additionally, they can provide more output power since their thermal resistance is lower than that of rival devices. Additionally, these IGBTs are classified as soft rapid reverse-recovery diodes. This shows that they are appropriate for overcurrent protection, rectifier, and bidirectional circuit applications.