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Editor's choice

Prospects and Challenges for Silicon Carbide (Si) in Energy Markets

Increased bandgap provides better temperature ranges of operation without breakdown and decreased efficiency, as well as increased efficiency under typical

Saumitra Jagdale Saumitra Jagdale October 20, 2023
A SiC Diode Test Procedure

In this article, We will learn how to measure a SiC MOSFET.

October 4, 2023

Schottky Diode Drain Contact Interferences with Sub-Linearity

As the semiconductor industry improves, Schottky-Barrier MOSFETs with metallic source and drain connections are becoming more popular. Unlike ordinary impurity-doped

Saumitra Jagdale Saumitra Jagdale January 11, 2024

Prospects and Challenges for Silicon Carbide (Si) in Energy Markets

Increased bandgap provides better temperature ranges of operation without breakdown and decreased efficiency, as well as increased efficiency under typical

Saumitra Jagdale Saumitra Jagdale October 20, 2023
Latest News and Articles
Schottky Diode Drain Contact Interferences with Sub-Linearity

As the semiconductor industry improves, Schottky-Barrier MOSFETs with metallic source and drain connections are becoming more popular. Unlike ordinary impurity-doped

January 11, 2024
PCB Design: optimization of a PCB

To improve the device's signal quality and performance, the PCB must be optimized, which necessitates careful component selection and arrangement.

October 19, 2023
Advancing the Electric Revolution: An Examination of Chip-on-Cell Technology for Sustainable Electric Vehicle Batteries

The competition to electrify our globe, particularly in the transportation sector, is in full gear. With the growing prevalence of

October 13, 2023
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Editor's choice

Prospects and Challenges for Silicon Carbide (Si) in Energy Markets

Increased bandgap provides better temperature ranges of operation without breakdown and decreased efficiency, as well as increased efficiency under typical

Saumitra Jagdale Saumitra Jagdale October 20, 2023
A SiC Diode Test Procedure

In this article, We will learn how to measure a SiC MOSFET.

October 4, 2023

Schottky Diode Drain Contact Interferences with Sub-Linearity

As the semiconductor industry improves, Schottky-Barrier MOSFETs with metallic source and drain connections are becoming more popular. Unlike ordinary impurity-doped

Saumitra Jagdale Saumitra Jagdale January 11, 2024

Prospects and Challenges for Silicon Carbide (Si) in Energy Markets

Increased bandgap provides better temperature ranges of operation without breakdown and decreased efficiency, as well as increased efficiency under typical

Saumitra Jagdale Saumitra Jagdale October 20, 2023
Latest News and Articles

Schottky Diode Drain Contact Interferences with Sub-Linearity

As the semiconductor industry improves, Schottky-Barrier MOSFETs with metallic source and drain connections are becoming more popular. Unlike ordinary impurity-doped

Saumitra Jagdale Saumitra Jagdale January 11, 2024

PCB Design: optimization of a PCB

To improve the device's signal quality and performance, the PCB must be optimized, which necessitates careful component selection and arrangement.

October 19, 2023
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Semiconductors

Nexperia releases new 600 V discrete IGBTs for class-leading efficiency in power applications

IGBT technology is a fairly advanced one. Despite this, it is projected

News Semiconductors July 10, 2023

Diodes launches first SiC 1200V MOSFET in TO247-4 package

The TO247-4-packaged SiC MOSFET in question is the first one on the

News Semiconductors April 11, 2023

Automotive

Advancing the Electric Revolution: An Examination of Chip-on-Cell Technology for Sustainable Electric Vehicle Batteries

The competition to electrify our globe, particularly in the transportation sector, is

Fujitsu has unveiled an ultra-compact, 30 A automotive relay for applications where space is limited.

The relay is the ideal option for managing power windows, defoggers, seat

Automotive News May 23, 2023

Focus

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World

Weltrend Semiconductor partners with Transphorm to release the first SuperGaN System-in-Package

The first SuperGaN System-in-Package from Transphorm and Weltrend Semiconductor was released (SiP).

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GaN Half-Bridge Power IC Maximizes Performance, Decreases Cost

Gallium nitride is a semiconductor technology of the next generation with a

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Step-down DC-DC converter with built-in inductor

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For battery charging applications, a new single-stage flyback controller

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Low Cost and Portable Nuclear Microreactor

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Compact ultra-wideband and omnidirectional antennas

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Galvanic isolated eight-channel drivers are ideal for all types of loads

The drivers include an additional case temperature sensor that guards against overheating of the whole

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New current transducer from Danisense with a big aperture for testing EVs and batteries

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By using PFM control method and ultra-low power consumption circuits with 200nA consumption current, efficiency

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