SiC VJFET Dynamic Circuit Model for Power Applications
One of the most technologically sophisticated semiconductors is wide bandgap silicon carbide…
Short-circuit Failure Models for Silicon Carbide Devices
Engineers have been able to build power electronic systems to meet specific…
Physical Examination of Termination Loss Using SiC MOSFET
The SiC MOSFET is able to achieve quick switching speed and low…
Construction of an integrated Silicon Carbide substrate production plant by STMicroelectronics in Italy
In order to meet the growing demand from ST's customers for SiC…