Schottky Diode Drain Contact Interferences with Sub-Linearity
As the semiconductor industry improves, Schottky-Barrier MOSFETs with metallic source and drain…
Prospects and Challenges for Silicon Carbide (Si) in Energy Markets
Increased bandgap provides better temperature ranges of operation without breakdown and decreased…
Neural Networks in Power Electronics Applications
Artificial neural networks have had the greatest impact on power electronics and…
GaN on Si power technology: its scope and potential
Gallium Nitride (GaN) has demonstrated tremendous potential over silicon(si) in the field…
AI and the Evolution of Power Electronics
Technological improvements in semiconductor-based power devices have occurred, with the integration of…
SiC VJFET Dynamic Circuit Model for Power Applications
One of the most technologically sophisticated semiconductors is wide bandgap silicon carbide…
Short-circuit Failure Models for Silicon Carbide Devices
Engineers have been able to build power electronic systems to meet specific…
Physical Examination of Termination Loss Using SiC MOSFET
The SiC MOSFET is able to achieve quick switching speed and low…
Wide-bandgap Semiconductor Applications in Power Electronics
Wide-Bandgap Semiconductors can function at higher voltages, temperatures, and frequencies as they…
Five-level single-phase SiC converter reduces switch voltage stress
This article discusses an effective MLC modification that uses advanced technologies to…