The on-state resistance temperature dependency of Mouser’s Wolfspeed SiC MOSFETs C3M in the TOLL Packages are significantly lower than that of conventional silicon MOSFETs. In order to achieve great efficiency at high power for next-generation power supply, MOSFETs must have higher switching rates and minimal conduction loss. The packages of the SiC MOSFETs are designed for high-performance power electronics applications, such as power supply for businesses, servers, and telecoms, as well as systems for charging electric vehicles, energy storage, and battery management.
High-power density designs are made possible by the SiC MOSFETs’ small footprint, reduced losses, and high power dissipation capabilities. They have a bigger metal tab on the rear, which allows for a cooler gadget. Compared to the typical TO-263-7L packaging, it has a reduced height and footprint.
