The DMWS120H100SM4 N-channel SiC MOSFET has been added by Diodes Incorporated to its portfolio of Silicon Carbide (SiC) products. This device satisfies the demand for increased efficiency and higher power density for applications such as industrial motor drives, solar inverters, data centers and telecom power supply, DC-DC converters, and EV battery chargers. The DMWS120H100SM4 operates at a high voltage (1200 V) and drain current (up to 37 A) while maintaining a low thermal conductivity (RJC = 0.6°C/W), making it particularly well suited for applications that must function in demanding situations. This MOSFET’s low RDS(ON) (typical) value of only 80m lowers conduction losses and improves efficiency for a 15 V gate drive. In order to reduce switching losses and lower package temperature, the device additionally has a gate charge of 52nC.
The TO247-4-packaged SiC MOSFET in question is the first one on the market. The device’s source can be connected to the extra Kelvin sensor pin to enhance the MOSFET’s switching performance and enable even higher power densities. Since this SiC MOSFET is designed to lower on-state resistance while preserving exceptional switching performance, it is ideal for high-efficiency power management applications. The following are the primary characteristics of the new DMWS120H100SM4 SiC 1200V MOSFET, little resistance to on, BVDSS grade that is high for power applications, negligible input capacitance, lead-free finish; complies with RoHS, antimony and halogen-free (“green”) gadget. The following are some uses for the N-channel SiC 1200V MOSFET:
- Datacenter and telecom power supplies
- Industrial motor drives
- DC-DC converters
- Solar inverters
- EV battery chargers
