Magnachip Semiconductor Corporation has unveiled a new family of Super Junction Metal Oxide Semiconductor Field Effect Transistors (SJ MOSFETs) with a 600V operating voltage that consists of nine different products with in-house design technology. The exclusive design of Magnachip reduces specific on-resistance (RSP) by around 10% while keeping the same cell-pitches as MOSFETs from earlier generations.
In addition, a quick recovery body diode is included in the new product family of 600V SJ MOSFETs. With less switching loss and reverse recovery time (trr), this diode technology considerably improves system efficiency. As a result, compared to the previous generation, the figure of merit used to gauge the general performance of MOSFETs was enhanced by more than 10%. These 600V SJ MOSFETs are therefore suitable for a wide range of industrial applications, including solar inverters, energy storage systems, uninterruptible power supply systems, and various electronics. The MMQ60R044RFTH device, one of these new MOSFETs, has an unusually low RDS(on) of 44m, which makes it the best option for servers and electric vehicle chargers. According to Omdia, a global market research company, the Si MOSFET markets for servers and hybrid & electric cars will increase at a compound annual growth rate of 7% and 11%, respectively, from 2023 to 2026.
