A 650 V Silicon Carbide (SiC) Schottky diode from Nexperia has been revealed. It is intended for power applications that need ultra-high performance, low loss, and great efficiency. An industrial-grade component that meets the demands of demanding high voltage and high current applications is the 10 A, 650 V SiC Schottky diode. These enable more environmentally friendly operations and include switched-mode power supplies, AC-DC and DC-DC converters, battery-charging infrastructure, uninterruptible power supplies, and photovoltaic inverters. Data centers, for instance, will be better positioned to fulfill strict energy efficiency regulations than those utilizing only silicon-based solutions if their power supplies are built using Nexperia’s PSC1065K SiC Schottky diode. With temperature-independent capacitive switching and zero recovery behavior, the PSC1065K offers cutting-edge performance and achieves an exceptional figure-of-merit (QC x VF). Almost no variations in current or switching speed affect its excellent switching performance.
Additional advantages of the PSC1065K’s combined PiN Schottky (MPS) structure include outstanding robustness against surge currents, which eliminates the need for additional protection circuitry. With the help of these capabilities, hardware designers can create tough high-power applications with smaller form forms and improved efficiency. The well-established reputation of Nexperia as a provider of high-quality solutions in a variety of semiconductor technologies will reassure designers even more. A Real-2-Pin (R2P) TO-220-2 through-hole power plastic package houses this SiC Schottky diode. Other package choices include the through-hole (TO-247-2) and surface mount (DPAK R2P and D2PAK R2P) with a real 2-pin configuration that improves reliability in high-voltage applications at temperatures as high as 175 °C.