With the release of ten new 25V and 30V fully optimised devices, Nexperia has expanded its offering of ASFETs for Hotswap and Soft Start. These devices combine an industry-leading enhanced SOA performance with incredibly low RDS(on), making them ideal for use in 12V hotswap applications such as data centre servers and communications equipment. The business has been creating market-leading ASFETs, devices in which important MOSFET performance characteristics are enhanced to meet the requirements of specific applications, for a number of years by combining established MOSFET knowledge and broad application experience. Products that are optimised for battery isolation, DC motor control, PoE, automotive airbag applications, and more have been successful since the introduction of ASFETs.
Hotswap applications may have a reliability difficulty due to in-rush currents. By creating a portfolio of “ASFETs for Hotswap and Soft Start with improved SOA” that are optimised for these applications, the business has solved this challenge. The PSMNR67-30YLE ASFET has an RDS(on)(max) as low as 0.7mOhm and produces 2.2 times more SOA (12V @100mS) than earlier technologies. The Spirito effect has been eliminated, and remarkable performance is maintained across the whole voltage and temperature range. The Spirito effect is symbolised by the steeper downward slope exhibited on SOA curves at higher voltages (compared to unoptimised devices). By fully describing these new devices at 125C and providing hot SOA datasheet curves, it further aids designers by displacing the need to thermally de-rate designs. The majority of hotswap and soft start applications are covered by eight new devices (three 25V and five 30V) supplied in a variety of LFPAK56 and LFPAK56E packages with RDS(on) ranging from 0.7mOhm to 2mOhm. In the upcoming months, the release of two further 25V devices is scheduled, each with an even lower RDS(on) of 0.5mOhm.
